FCH25N60N Datasheet, Fairchild Semiconductor

SupreMOS® January 2011 tm N-Channel MOSFET 600V, 25A, 0.126Ω Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, empl.

* RDS(on) = 0.108Ω ( Typ.) at VGS = 10V, ID = 12.5A
* Ultra Low Gate Charge ( Typ. Qg = 57nC)
* Low Effect.

The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise proce.